Fig. 2: Dynamic simulations of triboelectric nanogenerator (TENG) in traditional strategy (TS) and impedance decoupling strategy (IDS).

a, b Output voltage and output current of TENG in TS (a) and IDS (b) with different sensor resistance RS. c, d Simulated off and on real-time sensing signals (c) and on/off ratios (d) of sensors powered by TENG in TS and IDS. IDS is suitable for a wider RS range than TS. Inset: enlarged detail of the output current. e On/off ratios obtained by TS and IDS under different fixed resistor (RF). Compared with RS, the smaller the RF, the better to achieve high-precision sensing. f On/off ratios obtained by TS and IDS under different contact frequencies of TENG triboelectric layers. g, h Simulated dynamic current (IS1 and IS2) of multi-mode sensing in TS (g) and IDS (h). Two sensors influence each other in TS, and works independently in IDS. The sensors in simulations have an intrinsic on/off ratio of 10.