Table 1 Binary gas mixtures of C3F8 and c-C4F8 with application scenarios in semiconductor etching processes

From: Fluorine-induced gradient electric field in mesoporous covalent organic frameworks for efficient separation of polarized perfluorinated gases

Gas mixtures

Application scenarios

Substrate materials

c-C4F8/N2

Low-k material etching with reduced damage

SiO2, porous SiCOH

c-C4F8/Ar

High-aspect-ratio dielectric etching

SiO2, low-k dielectrics

c-C4F8/O2

Selective etching of Si3N4

Si3N4

C3F8/H2

Selective tungsten (W) etching

W, Si, SiO2

C3F8/O2

Bulk etching of poly-Si or metal layers

Poly-Si, Aluminum

C3F8/Ar

Shallow etching of SiO2

SiO2