Fig. 2: Material characterization and synaptic properties of the device. | Nature Communications

Fig. 2: Material characterization and synaptic properties of the device.

From: Multi-dimensional visual information processing under complex light environments using time-evolved polarization-sensitive synaptic electronics

Fig. 2

a Photograph of a large-scale array device (scale bar: 1 cm). b Surface and cross-section (inset) SEM images of microwires. Scale bars, 20 µm. c AFM image of PEA2SnI4 microwires with smooth surface, sharp edge, and homogeneous size. d XRD pattern and SAED pattern (inset) of PEA2SnI4 microwires (scale bar: 2 nm–1). e The crystal structure and (f) surface energy magnitudes of PEA2SnI4 along (1 0 0), (0 1 0) and (1 0 0) crystal planes. g PPF index expressed as a function of optical pulse widths. Inset: The ΔEPSC stimulated by two consecutive optical pulses with a fixed duration and interval of 0.5 s (520 nm, 7.56 mW cm–2). h Final current values (defined as the 7.5th second) of the reservoir state with optical pulse stimulation of 16 combinations. The value represents the average obtained from testing ten devices under identical conditions. i Cycling endurance of LTP and LTD across 6 consecutive cycles.

Back to article page