Fig. 2: ON–ONVB DAPs in hBN.
From: Quantum emission from coupled spin pairs in hexagonal boron nitride
a The numbers indicate the positions of ON at various distances in the hBN lattice (boron and nitrogen atoms are shown as gray and green spheres, respectively). In this panel, ON is placed at site 1 (red sphere). b Distance-dependent ZPL energies. Source data are provided as a Source Data file. c Electronic structure of the defects in the ground state. Position 10 corresponds to the isolated \({{{{\rm{O}}}}}_{{{{\rm{N}}}}}{{{{{\rm{V}}}}}_{{{{\rm{B}}}}}}^{-}\) defect, shown for reference. Filled and unfilled triangles represent occupied and unoccupied defect levels within the gap, respectively. The orientation of each triangle indicates spin-majority or spin-minority character.
