Fig. 6: DLTS characterization of dislocation-related traps.
From: Dislocation-assisted electron and hole transport in GaN epitaxial layers
a DLTS signal of two diodes, remarkable electron trap Ee and hole trap Eh peaks were observed on both diodes. The test conditions are listed in the figure, where UP is the pulse bias, UR is the reverse bias which was set to −20V corresponding to C2DEG, tP is the pulse width and TW is the duration that the transient is recorded, i.e., the rate window; b Arrhenius analysis of Ee and Eh. Ee is widely report as a dislocation related energy level, and it matches well with the density of TSD. c Evolution of DLTS signal with tP. d Schematic diagram of the energy band of dislocation assisted trapping and de-trapping of electrons and holes during DLTS measurement.
