Fig. 7: ICT reveals TED-assist hole transport.
From: Dislocation-assisted electron and hole transport in GaN epitaxial layers
a Test diagram of isothermal capacitance transients (ICT); b ICT signal at 300–460 K in TED-dominant with TW = 100 s, the hole emission signal falling logarithmically with tP and saturate. To eliminate the interference of the electron emission, transients at 305–330 K were taken for analysis in Fig. 5c–f. Transient Fitting: (c, d) At tP = 1 s, hole traps begin to emit. The activation energy extracted from the transient at tP = 1 s is Eh1 = 0.26 ± 0.01 eV; (e, f) At tP = 10 s, hole traps signal saturated, the activation energy extracted is Eh2 = 0.89 ± 0.05 eV.
