Table 1 Comparison of Threading Dislocation Types and Densities (Estimated by Etching Pits)
From: Dislocation-assisted electron and hole transport in GaN epitaxial layers
Sample | TSDs | TSD-induced electron traps | TEDs | TED-induced hole traps |
|---|---|---|---|---|
With GaN NL (TSD-dominant) | ~4.2 × 108 cm−2 | ~5 × 1016 cm−3 | ~3.8 × 108 cm−2 | 0.72 × 1016 cm−3 |
With AlN NL (TED-dominant) | ~0.2 × 108 cm−2 | ~0.2 × 1016 cm−3 | ~18 × 108 cm−2 | 3.4 × 1016 cm−3 |
