Fig. 4: Temperature effect on type II non-self-crossing memristors.
From: Programmable memristors with two-dimensional nanofluidic channels
a Current–voltage curves showcasing the Wien-type memory (M4) with a hBN device (h = 2 nm, HCl 1 M). c Current–voltage curves showcasing the Saturation-type (M2) memristor with a hBN device (h = 1 nm, AlCl3 0.5 M). Normalized area variation vs. temperature for b saturation type (M2) and d Wien-type (M4) memristors display contrasting effects with temperature. Normalization is done by dividing the loop area by the highest value of absolute conductance (\({\left|I\right|}_{\max }/{V}_{\max }\)).
