Fig. 3: Thickness dependence of the electrical properties of Pt/PbZrO3/SrPbO3 capacitors grown on LaLuO3-buffered DyScO3 substrates.
From: Establishing a pure antiferroelectric PbZrO3 phase through tensile epitaxial strain
a Current vs. voltage loops for a triangular waveform of voltage at 2 kHz for film thicknesses of 200, 40, 30, 20, and 9 nm (from left to right). Four displacement current peaks are observed for all the film thicknesses. b Corresponding polarization vs. voltage loops show clear double hysteresis, characteristic of antiferroelectric capacitors. Capacitive contributions for the lowest film thickness of 9 nm impede the integration of polarization vs voltage. c Critical electric field of the antiferroelectric-to-ferroelectric (AFE-FE) phase transition as a function of the film thickness (black, in log-log scale). The AFE-to-FE critical electric field is calculated by averaging the positive and negative critical voltages in (b), and dividing this average voltage by the film thickness. The imprint field, corresponding to the shift of the loops towards positive voltage, is also plotted (in red) as a function of the PbZrO3 thickness. Voltage is applied to the SrPbO3 electrode while the Pt top electrode is grounded.
