Fig. 2: Microstructure evolution depending on reactive sintering temperature. | Nature Communications

Fig. 2: Microstructure evolution depending on reactive sintering temperature.

From: High-performance ZrNiSn-based half-Heusler thermoelectrics with hierarchical architectures enabled by reactive sintering

Fig. 2

a Content of the half-Heusler phase and 4d interstitial Ni occupancies in the dense Zr0.75Hf0.25NiSn0.99Sb0.01 samples. b Low-magnification TEM image and c Cs-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) image of the porous Zr0.75Hf0.25NiSn0.99Sb0.01 samples sintered at 950 °C with a relative density of 95.4% (D95) taken along the [110] zone axis. The insert in (b) is the selected area of electron diffraction (SAED) of the region marked by a red dashed circle. The orange spheres and dashed circles in the HAADF-STEM image in (c) represent Ni atoms at the 4c and 4d positions, respectively. d Atom probe tomography (APT) reconstruction and corresponding 1D concentration profiles across the grain boundary (GB) in dense Zr0.75Hf0.25NiSn0.99Sb0.01 samples sintered at 800 °C and 950 °C, respectively. The corresponding 3D point clouds show Hf and Zr oxides (i.e., HfO2 and ZrO) in the 950 °C samples.

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