Fig. 4: Defect-manipulated anisotropic, electron-crystal magnetotransport in crystalline and near amorphous Cu-BHT films.

a Angular-dependent magnetoresistance measurements at 14 T and 50 K showing minima at θ ~ 90 for both amorphous Cu/BHT ratio 5 and crystalline ratio 2. The architecture of the measurements is illustrated in the inset. b, c Quadratic magnetoresistance for amorphous and crystalline samples respectively (θ = 0). Corresponding Kohler’s plots are shown in the inset. d Temperature-dependent Hall coefficient of amorphous (left) and crystalline (right) compositions, with inset diagrams illustrating different Fermi levels at two-band transport region. e, Calculated electronic band structure for the newly reported non-van der Waals layered structure shown in Fig. 1a. f, g Simulated temperature-dependent carrier concentrations for holes and electrons and their mobilities of the amorphous sample. h, i Extracted temperature-dependent carrier concentrations for holes and electrons and their mobilities of the crystalline sample. b is a scaling factor, bμ_e = μ_h.