Fig. 2: Charge carrier dynamics of localized submicron contacts.

Schematic description of the perovskite top cells fabricated on a ITS(SiOX) and b STS substrates. The color contrast in perovskite layers represents the strength of the electric field, which corresponds to the simulation results shown in Fig. S13. c Cross-section EBIC images of perovskite top cells on ITS(SiOX) and STS substrates. The scale bar is 1 μm. d Line profiles selected from the EBIC images in the perovskite top solar cell fabricated on ITS(SiOX) and STS substrates in this figure (c). e Simulated J-V curves of the single-junction device with localized submicron contacts varying based on various carrier diffusion lengths. f Reflectance of textured silicon substrates.