Fig. 1: Memristive device for operando transmission electron microscopy (TEM).

a Design of the lateral memristor based on MoS₂. The MoS₂ was first transferred to the Si/SiO₂ substrate, followed by electrode deposition (Pd, Ag, and Al, ~50 nm thick). The MoS₂ channel between Pd and Ag/Al (outlined by the thick quadrilateral) is approximately 1–2 µm in the x direction. Additionally, ~80 nm thick Al₂O₃ was deposited onto the channel. b Top-view scanning electron microscopy (SEM) image of the lateral device. c, d Schematic of the TEM holder and a closeup around the Au tip/FIB lamella contact. The Au tip is grounded and mobile, while the lamella is attached to the fixed TEM grid, through which external biasing can be applied. e High-angle annular dark-field (HAADF) image showing the lamella and the operando setup inside the TEM. f, g HAADF image and the corresponding composite map of Pd, S, and Ag based on energy-dispersive X-ray spectroscopy (EDXS) elemental mapping showing the channel region in (e). h, i HAADF images showing the cross-section of transferred MoS₂.