Fig. 4: TCAD simulations. | Nature Communications

Fig. 4: TCAD simulations.

From: Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors

Fig. 4

a Experimental and simulated transfer curves of perovskite b-JFETs with different annealing times. Energy band diagrams of the b Pe0 and c Pe120-based perovskite b-JFETs at different VGS levels. TCAD simulation revealing 2D contour maps of the current density distribution in the d Pe0- and e Pe120-based perovskite b-JFETs at VGS of −1 V (left panel) and 1 V (right panel).

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