Fig. 3: Ferroelectric properties of AlScN/AlN/AlScN multi-layer. | Nature Communications

Fig. 3: Ferroelectric properties of AlScN/AlN/AlScN multi-layer.

From: Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

Fig. 3

aEloc distribution of the AlScN films, with the standard deviation of the distribution noted. The Eapp and Eloc represent the magnitude of the applied and local electric fields experienced by each domain, respectively. The Sc concentration (x) in Al1−xScxN film was adjusted between 0.2 and 0.3. b Changes in Eloc distribution of the multi-layer as tAlN varied from 0 to 30 nm. c Changes in Pr and Ec of the multi-layer as a function of tAlN. d Polarization–voltage curves of the AlN and AlScN films. e Benchmark plots of Pr and EC of AlScN films with varying Sc concentration11,19,31,32.

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