Fig. 4: Integration of the contact-dominated design with low-dimensional transistors.

a Schematics of the cross-sectional view of the integrated construction (top) and the equivalent circuit diagram (bottom). b Electric potential distributions obtained via FEM simulations in the integrated sensors using our contact-dominated design and in the microstructured dielectric design with the same geometry under the same deformation. c Transfer curves of the CNT-based TFTs on a polyimide substrate at V_ds = −0.1 V with the same length but different widths of the effective gate electrode (i.e., different effective gate electrode areas). Inset: optical image of a TFT, scale bar, 50 µm. d Transfer curves of the integrated sensor at V_ds = −0.5 V under different pressures. e Normalized resistance change and corresponding sensitivity of the integrated sensor at V_ds = −0.5 V and V_gs = 2.66 V. f Comparison of the electrical response regarding to V_gs with that in previous reports on integrated capacitive pressure sensors. Source data are provided as a Source Data file.