Fig. 3: Operating principle and design of the UDST.
From: A unipolar-driven synaptic transistor for environment-adaptable vision system
a A schematic illustration of the operating mechanism of the UDST. b Synapse characteristics of the UDST with a 25 nm-thick pV3D3 TDL (UDST-1). c Synapse characteristics of the UDST with a 40 nm-thick pH1D3 HkCTL and a 10 nm-thick pV3D3 TDL (UDST-2). d Synapse characteristics of the UDST with a 70 nm-thick pH1D3 HkCTL and a 5 nm-thick pV3D3 TDL (UDST-3). e A cross-sectional high-resolution transmission electron microscopy (HRTEM) image of the UDST-3. f The spike-number-dependent plasticity (SNDP) for potentiation induced by dipole polarization and (g) by depression induced by charge trapping in the pH1D3 HkCTL.
