Fig. 4: Demonstration of optimized TFE-HZO film with low operation voltage and low EC. | Nature Communications

Fig. 4: Demonstration of optimized TFE-HZO film with low operation voltage and low EC.

From: Unveiling the polarization switching pathway through tetragonal phase as a metastable intermediate state in ferroelectric HfxZr1-xO2 thin film

Fig. 4

a Schematics of EC reduction through modifying the energy barrier of reversible O–T phase transition. b PUND characteristics of optimized HZO film under different operation voltage. 2Pr > 20 µC/cm2 is achieved under 0.65 V. c Benchmark of HZO film reported in this work as against some reported HZO films considering the Pr value at each operation voltage and electric field. The thickness of optimized TFE-HZO film is ~8 nm, which is measured by the TEM as shown in Fig. S30b. d Leakage current and e endurance performance of optimized HZO film. ~10−5 A/cm−2 leakage under 0.65 V and >1011 wake-up free endurance under 1.5 V is demonstrated on this device.

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