Fig. 2: Effective combination of surface and interface passivation.
From: 60 cm2 perovskite-silicon tandem solar cells with an efficiency of 28.9% by homogeneous passivation
A Non-radiative loss mapping measured using wide-field absolute PL (1 cm scale bar) with and without C60/SnOx for different conditions, SP (pFBPA), IP (PCl), and SIP (PCl/pFBPA) on 2.5 × 2.5 cm2 substrates. B Transient PL decay time (t3) with and without C60/SnOx for different conditions, SP, IP, and SIP. C Hyperspectral imaging (25 µm scale bar) and Kelvin probe force microscopy (250 nm scale bar) maps for control and SIP samples, where the z-axis represents the relative non-radiative loss and relative WF within the sample, respectively. D Work function results from scanning UPS measurements under light along graded perovskite/C60 (control, SP, IP, SIP). E The distance between EVBM and EF for samples with control, SP, IP, and SIP. F SPV amplitude extracted from KP and UPS measurements for control, SP, IP, and SIP samples. G Open-circuit voltage of single junction devices (with 1.65 eV absorber) with different passivation, surface passivation (SP), interface passivation (IP), and surface and interface passivation (SIP). H Champion reverse scan JV curves of wide bandgap (1.65 eV) devices with control and SIP. I Champion reverse JV curves of medium bandgap (1.55 eV) devices with control and SIP on ITO and SIP on FTO-substrates.
