Fig. 2: Effects of mitigated TEC on stress evolution.
From: Interfacial oxide wedging for mechanical-robust electrode in high-temperature ceramic cells
Raman shifting of a BSCF and b NTE-BSCF from 600 °C to RT in air. c The dynamic offset scenario of the BSCF and HWO. GIXRD spectrum at different tilt angles for d BSCF and eNTE-BSCF. f, g Residual strain distribution for the compressive-strained film (measured (points) and Gauss fitted (line) diffraction strain data as a function of sin2ψ), and schematic illustration of the residual strain distribution measurement. The corresponding XRD patterns and lattice structure strain information can be obtained by adjusting the instrument tilt angle ψ, where N0 is the sample normal direction and Nk is the diffraction vector.
