Fig. 3: Gating responses of Co0.299TaS2 nanoflakes.
From: Electrical control of topological 3Q state in intercalated van der Waals antiferromagnet Cox-TaS2
a, b Longitudinal resistance Rxx as a function of temperature under different gate voltages. c Hall resistivity ρxy versus magnetic field at different gate voltages under 7 K. The magnetic field is applied out-of-plane and swept from −12 to 12 T. d Gate-voltage dependence of the anomalous Hall resistivity ρAHE at zero magnetic field. The 3Q tetrahedral ordering exists in the pink-coloured region where the value of the anomalous Hall resistivity is finite. The inset depicts the Fermi surface filling modulated by gate voltage. e Gate-voltage dependence of the coercive field Hc. The grey line indicates where the tetrahedral ordering disappears.
