Fig. 2: Solution-processable and photo-patternable electronic materials.
From: Solution-processable and photo-curable system for low-cost and scalable transient electronics
a Radical polymerization of UV-PLCL in the presence of TPO as a photoinitiator and TTMP as a crosslinking enhancer. Characterization of polymerized UV-PLCL (insulator) films synthesized from different molecular weights of PLCL prepolymer: stress-strain curves (b), dielectric constants (c), and dissolution profiles in PBS (pH 7) at 37 °C (d). e Photo-responsive carbene insertion-based crosslinking of a semiconductor composed of PLCL as a polymer matrix, P3HT nanofibers (NFs) as a semiconducting element, Zonyl FS-300 as a surfactant, and a double-branched diazirine crosslinker. f Correlation between electrical conductivity and pattern yield of the semiconductor film as a function of crosslinker content. Data are presented as mean values ± standard deviation. n = 5 independent samples. g Conductivity and stretchability of semiconductors with different P3HT fractions. Data are presented as mean values ± standard deviation. n = 5 independent samples. h Dissolution behaviors of semiconductor films with and without P3HT in PBS (pH 7) at 37 °C. i Topochemical polymerization of a UV-curable conductor consisting of PEDOT:PSS as a conducting substance, HDD as a crosslinker, and Zonyl FS-300 as a surfactant. j Electrical conductivity and pattern yield of conductors with varying HDD contents. Data are presented as mean values ± standard deviation. n = 5 independent samples. k Changes in electrical properties of conductor films with 10 wt% of HDD after treatments with methanol (MeOH) and sulfuric acid (H2SO4) for 2 min. Data are presented as mean values ± standard deviation. n = 5 independent samples. l Comparison of strain-dependent electrical performance between pristine PEDOT:PSS and the optimized conductor (10 wt% HDD). Data are presented as mean values ± standard deviation. n = 5 independent samples. Optical images (top) and corresponding morphology profiles (bottom) of patterned insulator (m), conductor (n), and semiconductor (o) films with minimum line widths of several micrometers.
