Fig. 5
Defect bound band edge transport with increasing defect density. Band structure of a no-defect and b Re-doped monolayer MoS2 with a defect density of about 1013 cm−2. The spatial distribution of the defect bound band c and its corresponding linear charge density d. The isosurface in c is 3 × 10−4e/a0−3, where a0 is the Bohr radius. Dashed circles denote the positions of the defects
