Fig. 1
From: Electron engineering of metallic multiferroic polarons in epitaxial BaTiO3
Stable configuration of excess electron in BaTiO3 under the (001) in-plane strain. a Evolution of the self-trapping energy of the polaron with respect to the epitaxial strain. b Electronic properties of free carrier in BaTiO3 with zero strain. The orange isosurfaces represent the up-spin densities of 0.0005 Å−3. The zero energy is set to the valence-band maximum (VBM). CBM denotes the conduction-band minimum. The Fermi level is denoted by the vertical silver line. c Electronic properties of electron polaron in BaTiO3 with 2.0% strain. The orange isosurfaces represent the up-spin densities of 0.005 Å−3
