Fig. 2
From: Transparent conducting materials discovery using high-throughput computing
a Schematic illustration of defect formation energies Ef as a function of the Fermi level EF of four defects Di in different charge states. b–d Defect formation energies for n-, p-type dopings and the case of undopability, respectively. In all cases, D1 is a shallow acceptor, D2 a shallow donor, D3 a less stable shallow donor, and D4 a deep defect. In a, c and d, D1 and D4 are electron-killers. In d, D2–D4 are hole-killers
