Fig. 4: Etching of a graphene island.
From: The complementary graphene growth and etching revealed by large-scale kinetic Monte Carlo simulation
The simulation condition is μ = −0.2 eV and kBT = 0.1 eV. a Representative snapshots of a trajectory of KMC simulation for graphene etching. After dodecagon formed, the angles α1(green) and α2(red) are measured. The scale bar is 1 μm for all snapshots. b Plot of α1 and α2 along with etching time. The dash lines correspond to the 19° edges. c Plot of the island size in a with growth time. d Atomic details during the simulation, where a1 and a2 are corners between adjacent edges, a3 and a4 are edge with high kink concentration.
