Fig. 5: Rectifying and NDR mechanisms of the transistors of MnBi2Te4 monolayer.
From: Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer
a Rectifying mechanism of pin-junction FETs of MnBi2Te4 monolayer. b NDR mechanism of pip-junction FETs of MBT-ML. c NDR mechanism of nin-junction FETs of MBT-ML. Green shadow is the bias window. ⬤ and ● refer to the strong and weak transport, and ⦸ indicates the prohibited transport.
