Fig. 2: Descriptor for strength of phonon-bond-defect scattering.
From: How dopants limit the ultrahigh thermal conductivity of boron arsenide: a first principles study
Descriptor, Ddef;K, which gives an estimate of the strengths of the phonon-bond defect scattering rates in BAs from charged and neutral SiAs, GeAs, CB, CAs, SiB, and GeB dopants in the 4–8 THz range, as defined in Eq. (1).
