Table 1 Basic properties of Cu and Si.
Copper | ||||||
ACE | EAM | GTINV | SNAP | DFT | Exp. | |
Elastic moduli (GPa) | ||||||
C11 | 177 | 176 | 188 | 176 | 177 | 17756 |
C12 | 132 | 133 | 141 | 143 | 132 | 12556 |
C44 | 82 | 82 | 88 | 88 | 82 | 8156 |
Surface energies γsurf (J/m2) | ||||||
(111) | 1.36 | 1.24 | 7.81 | 1.29 | 1.36 | – |
(100) | 1.51 | 1.35 | 9.50 | 1.48 | 1.51 | – |
(110) | 1.59 | 1.48 | 7.82 | 1.56 | 1.57 | – |
Vacancy formation/migration, interstitial formation (eV) | ||||||
E\({}_{{\rm{vac}}}^{{\rm{f}}}\) | 1.12 | 1.28 | 1.13 | 1.37 | 1.07 | 1.2757 |
E\({}_{{\rm{vac}}}^{{\rm{m}}}\) | 0.71 | 0.69 | 0.78 | 0.91 | 0.74 | 0.67–0.7658 |
Idb(100) | 3.14 | 3.12 | 3.25 | 2.80 | 3.1040 | 2.8–4.259 |
Ioct | 3.38 | 3.29 | 3.48 | 2.96 | 3.3540 | – |
Itetr | 3.68 | 3.63 | 3.87 | 3.42 | 3.6440 | – |
Stacking fault energies (mJ/m2) | ||||||
γESF | 48 | 45 | −679 | 29 | 43 | – |
γISF | 43 | 45 | −1101 | 29 | 41 | – |
\({\gamma }_{{\rm{MAX}}}\) | 826 | 771 | 1635 | 1139 | 826 | – |
γMIDDLE | 500 | 479 | 510 | 562 | 494 | – |
γTWIN | 22 | 22 | −628 | 14 | 21 | – |
Melting temperature (K) | ||||||
TM | 1272 | 1324 | – | 1372 | 125137 | 135860 |
Silicon | ||||||
ACE | GAP | DFT | ||||
Elastic moduli (GPa) | ||||||
B | 80 | 83 | 82 | |||
C11 | 142 | 145 | 147 | |||
C12 | 50 | 52 | 50 | |||
C44 | 70 | 69 | 73 | |||
Surface energies γsurf (J/m2) | ||||||
(111) | 1.47 | 1.50 | 1.56 | |||
(100) | 2.11 | 2.12 | 2.17 | |||
(110) | 1.51 | 1.55 | 1.52 | |||
Vacancy/interstitial (eV) | ||||||
Evac | 3.72 | 3.73 | 3.67 | |||
Idb | 3.55 | 3.59 | 3.66 | |||
Ihex | 3.36 | 3.48 | 3.72 | |||
Itetr | 3.47 | 3.58 | 3.91 | |||