Table 1 Basic properties of Cu and Si.

From: Performant implementation of the atomic cluster expansion (PACE) and application to copper and silicon

Copper

 

ACE

EAM

GTINV

SNAP

DFT

Exp.

Elastic moduli (GPa)

C11

177

176

188

176

177

17756

C12

132

133

141

143

132

12556

C44

82

82

88

88

82

8156

Surface energies γsurf (J/m2)

(111)

1.36

1.24

7.81

1.29

1.36

(100)

1.51

1.35

9.50

1.48

1.51

(110)

1.59

1.48

7.82

1.56

1.57

Vacancy formation/migration, interstitial formation (eV)

E\({}_{{\rm{vac}}}^{{\rm{f}}}\)

1.12

1.28

1.13

1.37

1.07

1.2757

E\({}_{{\rm{vac}}}^{{\rm{m}}}\)

0.71

0.69

0.78

0.91

0.74

0.67–0.7658

Idb(100)

3.14

3.12

3.25

2.80

3.1040

2.8–4.259

Ioct

3.38

3.29

3.48

2.96

3.3540

Itetr

3.68

3.63

3.87

3.42

3.6440

Stacking fault energies (mJ/m2)

γESF

48

45

−679

29

43

γISF

43

45

−1101

29

41

\({\gamma }_{{\rm{MAX}}}\)

826

771

1635

1139

826

γMIDDLE

500

479

510

562

494

γTWIN

22

22

−628

14

21

Melting temperature (K)

TM

1272

1324

1372

125137

135860

Silicon

 

ACE

GAP

DFT

Elastic moduli (GPa)

B

80

83

82

C11

142

145

147

C12

50

52

50

C44

70

69

73

Surface energies γsurf (J/m2)

(111)

1.47

1.50

1.56

(100)

2.11

2.12

2.17

(110)

1.51

1.55

1.52

Vacancy/interstitial (eV)

Evac

3.72

3.73

3.67

Idb

3.55

3.59

3.66

Ihex

3.36

3.48

3.72

Itetr

3.47

3.58

3.91

  1. DFT reference obtained with FHI-aims26,27 for Cu and CASTEP29 for Si.