Fig. 1: Device configuration of QD-LED for the charge transport simulation.
From: Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
a Schematic illustration of device architecture. An indium tin oxide (ITO), a poly(3,4-ethylenedioxythiophene)/poly (styrenesulfonate) (PEDOT:PSS), a poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), QDs, a zinc oxide (ZnO) and an aluminium (Al) are used for the anode, HIL, HTL, EML, ETL and cathode, respectively. b Schematic pathways of possible current flow around the EML. c Flat-band energy-level diagram across the QD-LED device. EC0QD and EV0QD are the LUMO and HOMO energy-levels of the QD core, and EC0E and EV0H are the conduction and valance band edges of ETL and HTL, respectively. EC0S and EV0S are the conduction and valance band edges of the QD shell, respectively. dQD and ts are the diameter of QD particle and the thickness of the QD shell, respectively.
