Fig. 9: 4D-STEM applications to ferroelectricity.
From: Emergent properties at oxide interfaces controlled by ferroelectric polarization
a A HAADF image from an STO-BFO interface; arrows indicate Bi displacement direction and magnitude. b, c The corresponding E-field and charge-density maps were calculated from 4D-STEM data. d–f Analysis of the atomic structure (d), charge separation (e), and integrated B-site charge (f) determined from the HAADF image and charge-density map. g Charge-density image of bulk BFO from scanning diffraction experiments (h). Charge-density image obtained from DFT calculations. Reproduced with permission from ref. 73. Copyright [2019] {Springer Nature}.
