Table 3 Layer-dependent direct and indirect quasiparticle band gaps (in eV) of MoSi2N4 calculated within the GW approximation.

From: Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi2N4

Indirect gap Γ→K

Monolayer

Bilayer

Bulk

DFT-PBE

1.79

1.77

1.70

GW

2.82

2.67

2.41

GW correction

1.03

0.90

0.71

Direct gap at K

DFT-PBE

2.03

2.09

2.10

GW

3.13

2.94

2.71

GW correction

1.10

0.85

0.61

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