Table 1 Formation energy

From: Rotational magnetoelectric switching in orthorhombic multiferroics

 

o-CrGe2Se3

o-CrSn2Se3

h-CrGe2Se3

h-CrSn2Se3

VS281,82

2H-WS249,83

Ef

51.4

64.3

31.3

54.0

90

77

  1. The calculated formation energy (meV atom−1) of o-CrX2Se3 and h-CrX2Se3 (X = Ge, Sn). The formation energy of VS2 and 2H-WS2 are shown for comparison.
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