Table 2 Some magnetic impurities doped AFM insulators and semiconductors with high TN

From: High temperature ferrimagnetic semiconductors by spin-dependent doping in high temperature antiferromagnets

Materials

Properties

D

Experiments

Theories

   

x

〈M〉

TN

Gap

Ref

x

Gap

Ref

 

La(Fe1−xDx)O3

Mo

0.25

1 × 10−2

RT

y

47

   
  

Zn

0.30

1 × 10−4

  

27,55

   
  

Ti

0.20

2 × 10−3

  

40,53,54

   
  

Ni

0.30

1 × 10−2

  

48

   
  

Cu

0.20

/

  

56

   
  

Cr

0.50

1 × 10−3

  

49,50,51,52

0.5

n

70

  

Mg

0.30

/

 

58

   
  

Co

0.10

   

59

   
  

Nb

     

0.25

n

71

  

V

     

0.25

y

72

 

Bi(Fe1−xDx)O3

Co

0.30

5 × 10−2

RT

y

61,62,64

0.125

y

73

  

Mn

0.20

/

  

60

0.125

 

73

  

Cr, Ni, V

0.03

1 × 10−3

  

64

0.125

 

73

  

Nb

0.01

1 × 10−3

  

63

   
  

Y

0.10

/

 

65

   
  

Cu, Zn

     

0.25

y

74

 

(Ni1−xDx)O

Zn

0.05

1 × 10−4

RT

y

66

   
  

Fe

0.02

1 × 10−4

  

67

   
  

Mn

0.06

1 × 10−3

  

68

   
  

Nd

0.03

1 × 10−4

  

69

   
  

Li, Cu, Ag

     

0.083

y

75

 

(Mn1−xDx)Te

Cu

0.075

/

RT

/

96

   
  

Cr

0.05

3 × 10−2

280 K

 

97

   
 

Sr(Tc1−xDx)O3

Ru

0.75

4 × 10−2

150 K

 

98

   
  1. x is the doping concentration. 〈M〉 is the average magnetic moment per magnetic atom in unit of μB. RT means TN is above room temperature, and y and n denotes yes and no, respectively. In addition, / denote that the related property is not discussed in the references.
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