Table 4 Comparative analysis of defect formation energies in silicon crystals and silica polymorphs using DFT, MTP, and ReaxFF results

From: A unified moment tensor potential for silicon, oxygen, and silica

 

DFT

MTP

ReaxFF

Si-V

3.7

2.3

3.0

Si-V2

5.5

3.7

6.7

Si-I2

2.9

3.0

1.9

Si-I3

2.1

2.5

2.1

Si-I4C1

2.2

2.5

2.0

Si-I4C2

2.1

2.4

1.1

α-AQ

6.1

5.8

6.6

β-BQ

5.4

5.8

5.1

α-AC

5.1

5.1

4.9

α-AT

5.0

4.8

1.3

KE

5.2

5.7

0.5

CO

5.40

6.20

4.4

CO

5.9

6.78

4.3

MO

5.2

5.8

5.5

SE

6.2

4.3

0.9

ST

6.2

5.3

2.3

RRMSE (%)

 

4.5

12.0

  1. Our comparison excludes the results from BKS and COMB as they are not parameterized for a single oxygen system. In the training set, only the silicon vacancy defect is present, while other defects are used to test the portability of the potential. For Si-I2, Si-I3, Si-I4C1, and Si-I4C2, the formation energy is given in eV per atom.