Fig. 4: In-plane rotation of H-SkL under bending.
From: Emergence and transformation of polar skyrmion lattices via flexoelectricity
a Distributions of strain in the thin films along the [001] axis (z axis) generated by bending operations (\({{\rm{B}}}_{1}^{+}\) and \({{\rm{B}}}_{1}^{-}\)). The strain gradient \({\varepsilon }_{\mathrm{11,3}}^{\text{b}}\) generated by different bending operations is marked in a. b, c Stripe-like intermediate states appear in the PTO thin films during bending-annealing processes. N denotes the number of simulation steps. d, e H-SkLs with different orientations emerged after bending-annealing processes. In the simulations, E[001] = –1.25 MV/cm and f11 = f12 = 4 V, f44 = 0 V are set.
