Fig. 3: Charge transition probability calculated from the large-scale NAMD.
From: First principles calculations of carrier dynamics of screw dislocation
a The schematic diagram of a hole transition from state 3 to the occupied state 4, 5, and 6, shown in the bandstructure of GaN screw dislocation; the blue and red balls represent holes and electrons, respectively; the shadow marked in the bandstructure shows the bands formed of dislocation core; b Time dependent nonradiative transition probability from the state 3 to the occupied state 4, 5 and 6, calculated with different temperature.
