Fig. 4: The carrier capture mechanism and potential profiles of a screw dislocation.
From: First principles calculations of carrier dynamics of screw dislocation
a The schematic diagram of the carrier capture and nonradiative recombination mechanism around a dislocation core; the blue dashed line marks the Fermi level of the dislocation system; the red curve plots the DOS of the GaN dislocation supercell, with the Fermi level marked using green dashed line; the blue curved arrow presents the nonradiative transition across the band-gap states formed of the dislocation core; the gray shadows indicate the dark area observed in PL spectra. b Potential profile for the dislocation core at origin with different carrier concentrations.
