Fig. 2: High-resolution transmission electron microscopy images of strain-induced amorphous bands in Si I. | npj Computational Materials

Fig. 2: High-resolution transmission electron microscopy images of strain-induced amorphous bands in Si I.

From: Virtual melting and cyclic transformations between amorphous Si, Si I, and Si IV in a shear band at room temperature

Fig. 2

a Amorphous band obtained within larger Si IV band after its appearance in Si I 〈111〉 nanopillar under uniaxial compression. The scale bar is 5 nm. Residual nanosized Si IV clusters are marked by dotted blue circles. Reproduced with permission from17. b, c Amorphous shear bands in Si I shocked using a high energy laser. Reproduced with permission from58 and23, respectively.

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