Fig. 2: Electronic and topological properties of 3-SL MBT thin films. | npj Computational Materials

Fig. 2: Electronic and topological properties of 3-SL MBT thin films.

From: Stacking-dependent electronic and topological properties in van der Waals antiferromagnet MnBi2Te4 films

Fig. 2

a Calculated band gap as a function of lateral shift. The positive (negative) sign of band gaps indicates quantum anomalous Hall insulators (C = 1) and trivial magnetic insulators (C = 0). b The evolution of band gaps and stacking energy between ABC- and CAC-stacking order along the high-symmetry [1-10]. The grey shaded area indicates the topological transition point. Anomalous Hall conductance σxy as a function of Fermi energy (c) and the distribution of Berry curvature in the momentum space (d, e) in the ABC- and CAC-stacking order, respectively.

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