Fig. 3: Extrinsic doping and point defect complexes in typical Fe/Co/Ni-based HH compounds. | npj Computational Materials

Fig. 3: Extrinsic doping and point defect complexes in typical Fe/Co/Ni-based HH compounds.

From: P-type dopability in Half-Heusler thermoelectric semiconductors

Fig. 3

a Experimental Seebeck coefficients14,16,24,28,48 at room temperature versus normalized pinned Fermi level in p-type ZrNiSn, NbCoSn, and NbFeSb with different dopants; Defect formation energies for (b), Zr-doped NbFeSb, (c) Zr-doped NbCoSn and (d) In-doped ZrNiSn. The red dashed line represents the self-consistent Epin at 300 K.

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