Fig. 4: Defect formation energy of extrinsic defects and complexes in aliovalence-doped NbCoSn.
From: P-type dopability in Half-Heusler thermoelectric semiconductors
a, d Ti-doped, b, e Zr-doped, c, f Hf-doped NbCoSn under B-rich and B-poor conditions, respectively. The red dashed line represents the self-consistent Epin at 300 K.
