Fig. 3: Abundance of density of states (DOS) and electric transport of 2D metallic MBenes. | npj Computational Materials

Fig. 3: Abundance of density of states (DOS) and electric transport of 2D metallic MBenes.

From: Computational discovery of metallic MBenes for two-dimensional semiconductor contacts approaching the quantum limit

Fig. 3

a Schematic illustration of abundance of DOS (DF) that essentially determines the carrier transport of metallic MBenes, b DF values of 40 selected highly stable MBenes M2BT2 (T = O, F, Cl, OH). c Output (Id-Vd) curves of 15 selected high-DF MBenes M2BT2 (T = O, F, Cl, OH). d Electrical resistivity (ρ) of Nb2BT2 and Tc2BT2 (T = O, F, Cl, OH). The ρ of Nb- and Tc-based MXenes for the comparison.

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