Fig. 4: Dependence of SdH oscillations frequency and cyclotron mass of stacking fault states on the poorly-known parameters \({\tilde{\gamma }}_{3}\) (top panel) and \({\tilde{\gamma }}_{2}\) (bottom panel). | npj Computational Materials

Fig. 4: Dependence of SdH oscillations frequency and cyclotron mass of stacking fault states on the poorly-known parameters \({\tilde{\gamma }}_{3}\) (top panel) and \({\tilde{\gamma }}_{2}\) (bottom panel).

From: Electronic properties of stacking faults in Bernal graphite

Fig. 4

Blue lines are for νSdH and red lines are for mCR. For comparison, the bulk graphite values are νSdH ≈ 4.5 and 6.1T10,11 for holes and electrons, respectively, and mCR ≈ 0.058m019 (for electrons that dominate in CR). To mention, self-consistent on-layer potentials were calculated separately for each set of tight-binding parameters.

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