Fig. 5: Coupled electron and phonon dynamics in GaAs.
Top row: electron populations, fnk(t), mapped onto the band structure at different time snapshots labeled in the panels, with point sizes proportional to the populations. Bottom row: excess phonon populations, ΔNνq(t), shown on the phonon dispersion. To the left of each panel: populations (electrons) or change of populations (phonons) as a function of energy averaged over the BZ. At time t = 0, the electrons are excited via a pump pulse 0.45 eV above the band gap, leading to a carrier concentration of 1.1 × 1019 cm−3 at the end of the 50 fs pulse. The phonons are initially set at a Bose-Einstein distribution at 300 K.
