Table 1 Representative characteristics of different types of light-emitting didoes
From: Flexible quantum dot light-emitting diodes for next-generation displays
Type | (i) iLED | (ii) OLED | (iii) PLED | (iv) QLED |
|---|---|---|---|---|
Max. brightness | 106–108 | 102–104 | 102–104 | 103–105 |
Fabrication | MBE and MOVPE | Spin coating and vacuum evaporation | Spin coating | Spin coating |
Color purity | ~20–100 nm | ~100 nm | ~100 nm | ~30 nm |
Operating voltage | – | 2–10 V | 2–10 V | 2–10 V |
Stability of active materials | High | Low | Low | High |
Active layer thickness | >Several micrometers | <100 nm | <100 nm | <100 nm |
