Fig. 4
From: Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
Additional free electrons generated by addition of TBAF (Δe+), interface trap density (Ntr) and trap concentration per energy unit (Dtr) of transistors based on un-doped and doped P(NDI2OD-T2) as a function of equivalents of TBAF
