Fig. 2
From: Large-area plastic nanogap electronics enabled by adhesion lithography
Patterning of self-aligned gate thin-film transistors using a-Lith. a Schematic of a conventional TFT structure characterised by significant Source-Drain/Gate (S-D/G) overlap. b Processing steps used to fabricate the self-aligned-gate transistors (SAG TFTs). Resulting devices exhibit negligible S-D/Gate overlap. c Optical micrograph of Au source and drain separated by Al gate. d Arrays of SAG TFTs fabricated by a-Lith on a flexible PET substrate. e Transfer, and f output characteristics measured for an In2O3–based SAG TFT with channel width and length of 1 mm and 50 μm, respectively
