Fig. 3
Carrier transport modeling in Si nanomeshes. a Schematic concept of the analytical modeling which regards the nanomesh film as a new material. Assuming the same nanomesh openings (indicated by the white areas among the light blue material parts) for the entire W × L area, the sidewall circumference (indicated by the red curves) will then always be proportional to the square root of the mesh-opening area, which is a natural consequence of the theorems about similar figures. The sidewall area (s), equal to the sidewall circumference times the film thickness, will therefore also be proportional to the square root of (1 – x). b Dependence of nanomesh mobility on fill factor which is affected by fractional material (µfill) and scattering of trace sidewall (µwall) using “Matthiessen’s Rule”. Here µfill and µwall are approximated as a × x and \(b/\sqrt {1 - x}\) respectively, where a and b are materials and surface dependent prefactors. c Fitting of experimental effective mobility of semiconductor nanomeshes as a function of fill factor using the analytical model here. A fitting curve with a = 616.3 cm2/V·s and b = 71.8 cm2/V·s matches closely with experimental data
