Fig. 1: Fabrication of the UTAuE. | npj Flexible Electronics

Fig. 1: Fabrication of the UTAuE.

From: Solution process formation of high performance, stable nanostructured transparent metal electrodes via displacement-diffusion-etch process

Fig. 1

a Schematics of the fabrication process of the UTAuE. b–e Cross-sectional TEM (left), HAADF-STEM (top right), and EELS/EDX mapping (bottom right) images of sacrificial Cu seed, Cu–Au, annealed Cu–Au, and UTAuE, respectively. Green, blue, red, and yellow represent Si, C, Cu, and Au elements on the elemental mapping images, respectively. Scale bars are 50, 20, 20, and 10 nm for b–e, respectively.

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